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  • Volume 2014

    Effect of High Temperature on the Impact Ionization of N-Channel Fully Depleted SOI MOSFET
    (International Journal of Engineering Works)

    Vol. 1, Issue 3, PP. 48-51, Dec. 2014
    Keywords: Impact Ionization, Fully Depleted, TCAD Transconductance

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    Abstract

    High temperature effects on the impact ionization of the n-channel fully depleted (FD) SOI MOSFET are investigated over a wide range of temperature from 300  to the 600 K by using TCAD. In particular, we have studied the current voltage characteristics (Id-Vd and Id-Vg ) , threshold voltage (Vth)and transconductance (gm). By the simulation results, we have analyzed that impact ionization decreases with increasing the temperature and vice versa. Furthermore, we have observed that threshold voltage and transconductance are both inversely proportional to the temperature.

    Author

       Kaleem Ullah: CSSP University of Punjab Lahore Pakistan,   kaleem_758@yahoo.com

       Saira Riaz: CSSP University of Punjab Lahore Pakistan, saira_cssp@yahoo.com

       M. Habib: CSSP University of Punjab Lahore Pakistan, mhabiblhr@gmail.com

       F. Abbas: CSSP University of Punjab Lahore Pakistan, fakhar.abbas30@yahoo.com

       S. Naseem: CSSP University of Punjab Lahore Pakistan, shahzad_naseem@yahoo.com

       G. Abbas: Bahauddin Zakarya University Multan Pakistan, ga_phy@yahoo.com

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    Cite

    K. Ullah, S. Riaz, M.Habib, F. Abbas, S. Naseem, G. Abbas "Effect of High Temperature on the Impact Ionization of N-Channel Fully Depleted SOI MOSFET" International Journal of Engineering Works, Vol. 1, Issue 3, PP. 48-51, Dec. 2014.

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