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  • Volume 2016

    Temperature and Channel width Dependence of Novel Lateral Gate VJFET
    (International Journal of Engineering Works)

    Vol. 3, Issue 2, PP. 1-5, February 2016
    Keywords: VJFET, channel width, Normally-off, Transconductance, on-resistance

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    2D numerical simulation of normally off vertical N-channel JFET with novel internal lateral gate configuration designed on a 9.4 ?m, 7 × 1015 cm?3 doped drift layer is presented. The study covers an interval of blocking voltages ranging from 600 V to 933 V for various temperatures and channel widths. The effect of elimination of vertical JFET gates and variation in channel width on the on-state/breakdown performance is carefully investigated. The device performance has been compared in terms of blocking voltages, specific on-state resistance and maximum output current density in the temperature range from room temperature up to 473 K. Normally-off operation with blocking voltage (Vbl) of 933 V is demonstrated for a gate voltage of -20 V. The goal of this work is to predict the performance of lateral gate VJFET configuration and have a deep insight into the relationship between the device’s electrical/thermal characteristics and channel thickness. The detailed investigation reveals that lateral gate configuration offers less resistance to leakage current reducing the blocking capability of the device. Though, it’s excellent on state performance in terms of high saturation current (1.23A) and low on-resistance (3.6 m ?) makes this VJFET an excellent device for fast power switching applications.


    Muhammad Farooq Saleem1,2, Muhammad Khalid1,3, Yasir Abdul Haleem1,2, Hafiz Tariq Masood1,2, Rashid Khan2,4, Mehdi Khan2, Ghulam Abbas Ashraf5,6, Awais Siddique Saleemi7,8, Saira Riaz1, Shahzad Naseem1

    First Author: Centre of Excellence in Solid State Physics ,University of the Punjab, Lahore, Pakistan,
    Second Author: University of Science and Technology of China, Hefei, Anhui, China,
    Third Author: Department of Physics, NED University of Engineering and Technology, Karachi, Pakistan
    Fourth Author: Department of Physics, Quaid-i-Azam University, Islamabad, Pakistan
    Fifth Author: Department of Physics , Allama Iqbal Open University, Islamabad, Pakistan
    Sixth Author: Department of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai, China
    Seventh Author: Department of Physics, COMSATS Institute of Information Technology, Islamabad, Pakistan
    Eigth Author: Tsinghua University, Beijing, China

    Full Text


    Muhammad Farooq Saleem, Muhammad Khalid, Yasir Abdul Haleem, Hafiz Tariq Masood, Rashid Khan, Mehdi Khan, Ghulam Abbas Ashraf, Awais Siddique Saleemi, Saira Riaz, Shahzad Naseem,"Temperature and Channel width Dependence of Novel Lateral Gate VJFET" International Journal of Engineering Works, Vol. 3, Issue 1, PP. 1-5, February 2016. 


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